Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport

doi:10.1038/s41524-018-0145-0

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	Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport
	D.Wang; D.Han; D.West; N.K.Chen; S.Y.Xie; W.Q.Tian; V.Meunier
	2019
发表期刊	Npj Computational Materials
ISSN	2057-3960
卷号	5 页码:6
摘要	The ionization of dopants is a crucial process for electronics, yet it can be unexpectedly difficult in two-dimensional materials due to reduced screening and dimensionality. Using first-principles calculations, here we propose a dopant ionization process for two-dimensional semiconductors where charge carriers are only excited to a set of defect-bound band edge states, rather than to the true band edge states, as is the case in three-dimensions. These defect-bound states have small enough ionization energies but large enough spatial delocalization. With a modest defect density, carriers can transport through band by such states.
关键词	total-energy calculations,mos2,Chemistry,Materials Science
DOI	10.1038/s41524-018-0145-0
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63023
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	D.Wang,D.Han,D.West,et al. Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport[J]. Npj Computational Materials,2019,5:6.
APA	D.Wang.,D.Han.,D.West.,N.K.Chen.,S.Y.Xie.,...&V.Meunier.(2019).Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport.Npj Computational Materials,5,6.
MLA	D.Wang,et al."Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport".Npj Computational Materials 5(2019):6.

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