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High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 8, 页码: 10
作者:  Q.Zhao;  J.H.Miao;  S.J.Zhou;  C.Q.Gui;  B.Tang;  M.L.Liu
浏览  |  Adobe PDF(2541Kb)  |  收藏  |  浏览/下载:219/87  |  提交时间:2020/08/24
VLED,silicon substrate,current spreading,Au-In eutectic bonding,laser lift-off,lift-off,leds,enhancement,fabrication,performance,sapphire,Science & Technology - Other Topics,Materials Science