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	AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties
	Y. Chen, J. Shi, Z. Zhang, G. Miao, H. Jiang and H. Song
	2023
发表期刊	Journal of Materials Chemistry C
ISSN	20507526
卷号	11期号:23页码:7697-7704
摘要	An AlGaN-based solar-blind UV heterojunction bipolar phototransistor (HBPT) with an AlGaN-based multiple quantum well (MQW) layer as the light absorption layer is proposed in this paper. On the basis of the individually optimized growth of the MQW light absorption layer and the p-type AlGaN base layer, the material growth, device preparation, and performance evaluation of the solar-blind UV HBPT are investigated in detail. The evaluations show that the fabricated two-end NPN-type phototransistor with a floating base presents a low dark current density of about 4.8 × 10−8 A cm−2 and a high peak responsivity of 4.55 A W−1 at 267 nm as the device is biased at a VCE of 12 V, corresponding to a high EQE of 2.1 × 103%. It also exhibits a quick transient response speed of 13.47 ns at a lower bias voltage (VCE = 3 V). These results favorably prove the feasibility of realizing a high performance solar-blind UV photodetector based on the AlGaN-based MQW HBPT. © 2023 The Royal Society of Chemistry.
DOI	10.1039/d3tc00317e
URL	查看原文
收录类别	sci ; ei
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67390
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. Chen, J. Shi, Z. Zhang, G. Miao, H. Jiang and H. Song. AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties[J]. Journal of Materials Chemistry C,2023,11(23):7697-7704.
APA	Y. Chen, J. Shi, Z. Zhang, G. Miao, H. Jiang and H. Song.(2023).AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties.Journal of Materials Chemistry C,11(23),7697-7704.
MLA	Y. Chen, J. Shi, Z. Zhang, G. Miao, H. Jiang and H. Song."AlGaN-based solar-blind UV heterojunction bipolar phototransistors: structural design, epitaxial growth, and optoelectric properties".Journal of Materials Chemistry C 11.23(2023):7697-7704.

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AlGaN-based solar-bl（2336KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览 请求全文

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