High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain

doi:10.1109/TED.2022.3184277

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	High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain
	Z. Zheng; B. Qiao; Z. Zhang; X. Huang; X. Xie; B. Li; X. Chen; K. Liu; L. Liu and D. Shen
	2022
发表期刊	IEEE Transactions on Electron Devices
ISSN	00189383
卷号	69 期号:8 页码:4362-4365
摘要	Detectivity is the most key parameter in weak-signal photodetection, which depends on high photoresponse and low noise simultaneously. In this work, metalsemiconductormetal solar-blind UV detectors with internal gain were fabricated based on high resistant and a certain oxygen vacancy density Ga2O3 thin films. Electrical measurements and electric field simulation indicated that thickening the active layer is helpful for high responsivity. The gain is dominated by the tunneling effect in high electric field under the electrodes. A high photoresponse of 371 A/W and a normalized detectivity up to 6.6 1016 Jones were obtained. 2022 Institute of Electrical and Electronics Engineers Inc.. All rights reserved.
DOI	10.1109/TED.2022.3184277
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收录类别	sci ; ei
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/66705
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Z. Zheng,B. Qiao,Z. Zhang,et al. High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain[J]. IEEE Transactions on Electron Devices,2022,69(8):4362-4365.
APA	Z. Zheng.,B. Qiao.,Z. Zhang.,X. Huang.,X. Xie.,...&L. Liu and D. Shen.(2022).High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain.IEEE Transactions on Electron Devices,69(8),4362-4365.
MLA	Z. Zheng,et al."High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain".IEEE Transactions on Electron Devices 69.8(2022):4362-4365.

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