Oxidation kinetics of nanocrystalline Al thin films

doi:10.1108/acmm-11-2018-2037

CIOMP OpenIR

	Oxidation kinetics of nanocrystalline Al thin films
	J.S.Luo; L.G.Zhang; H.G.Yang; N.Zhang; Y.F.Zhu; X.Y.Liu
	2019
发表期刊	Anti-Corrosion Methods and Materials
ISSN	0003-5599
卷号	66 期号:5 页码:638-643
摘要	Purpose This paper aims to study the oxidation kinetics of the nanocrystalline Al ultrathin films. The influence of structure and composition evolution during thermal oxidation will be observed. The reason for the change in the oxidation activation energy on increasing the oxidation temperature will be discussed. Design/methodology/approach Al thin films are deposited on the silicon wafers as substrates by vacuumed thermal evaporation under the base pressure of 2 x 10(-4) Pa, where the substrates are not heated. A crystalline quartz sensor is used to monitor the film thickness. The film thickness varies in the range from 30 to 100 nm. To keep the silicon substrate from oxidation during thermal oxidation of the Al film, a 50-nm gold film was deposited on the back side of silicon substrate. Isothermal oxidation studies of the Al film were carried out in air to assess the oxidation kinetics at 400-600 degrees C. Findings The activation energy is positive and low for the low temperature oxidation, but it becomes apparently negative at higher temperatures. The oxide grains are nano-sized, and gamma-Al2O3 crystals are formed at above 500 degrees C. In light of the model by Davies, the grain boundary diffusion is believed to be the reason for the logarithmic oxidation rate rule. The negative activation energy at higher temperatures is apparent, which comes from the decline of diffusion paths due to the formation of the gamma-Al2O3 crystals. Originality/value It is found that the oxidation kinetics of nanocrystalline Al thin films in air at 400-600 degrees C follows the logarithmic law, and this logarithmic oxidation rate law is related to the grain boundary diffusion. The negative activation energies in the higher temperature range can be attributed to the formation of gamma-Al2O3 crystal.
关键词	Al,Grain boundary diffusion,Nanocrystalline films,Oxidation kinetics,resistive evaporation,thermal-oxidation,aluminum,mechanism,al(111),growth,al2o3,cu2o,Metallurgy & Metallurgical Engineering
DOI	10.1108/acmm-11-2018-2037
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63152
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J.S.Luo,L.G.Zhang,H.G.Yang,et al. Oxidation kinetics of nanocrystalline Al thin films[J]. Anti-Corrosion Methods and Materials,2019,66(5):638-643.
APA	J.S.Luo,L.G.Zhang,H.G.Yang,N.Zhang,Y.F.Zhu,&X.Y.Liu.(2019).Oxidation kinetics of nanocrystalline Al thin films.Anti-Corrosion Methods and Materials,66(5),638-643.
MLA	J.S.Luo,et al."Oxidation kinetics of nanocrystalline Al thin films".Anti-Corrosion Methods and Materials 66.5(2019):638-643.

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