Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

doi:10.1088/1674-1056/28/4/048503

CIOMP OpenIR

	Ultraviolet photodetectors based on wide bandgap oxide semiconductor films
	C.Q.Zhou; Q.Ai; X.Chen; X.H.Gao; K.W.Liu; D.Z.Shen
	2019
发表期刊	Chinese Physics B
ISSN	1674-1056
卷号	28 期号:4 页码:11
摘要	Ultraviolet (UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga2O3, TiO2, and NiO, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.
关键词	Photodetector,ultraviolet,oxide semiconductor film,solar-blind photodetector,msm uv photodetector,thin-film,fast-response,optoelectronic properties,performance enhancement,electrical-properties,schottky contacts,crystal-structure,zno,nanowire,Physics
DOI	10.1088/1674-1056/28/4/048503
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/62738
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C.Q.Zhou,Q.Ai,X.Chen,et al. Ultraviolet photodetectors based on wide bandgap oxide semiconductor films[J]. Chinese Physics B,2019,28(4):11.
APA	C.Q.Zhou,Q.Ai,X.Chen,X.H.Gao,K.W.Liu,&D.Z.Shen.(2019).Ultraviolet photodetectors based on wide bandgap oxide semiconductor films.Chinese Physics B,28(4),11.
MLA	C.Q.Zhou,et al."Ultraviolet photodetectors based on wide bandgap oxide semiconductor films".Chinese Physics B 28.4(2019):11.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Ultraviolet photodet（2797KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载