Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content

doi:10.1021/acs.jpclett.8b02416

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	Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content
	Zhang, Xin-Yuan 1,2,3; Han, Donglai 4; Ma, Ning 3; Gao, Renxian 3; Zhu, Aonan 3; Guo, Shuang 3; Zhang, Yongjun 3; Wang, Yaxin 3; Yang, Jinghai 3; Chen, Lei 3
	2018-10-18
发表期刊	JOURNAL OF PHYSICAL CHEMISTRY LETTERS
ISSN	1948-7185
卷号	9 期号:20 页码:6047-6051
通讯作者	Yang, Jinghai(jhyang1@jlnu.edu.cn) ; Chen, Lei(chenlei@jlnu.edu.cn)
摘要	We discuss how the controllable carrier influences the localized surface plasmon resonance (LSPR) and charge transfer (CT) in the same system based on ultraviolet-visible and surface-enhanced Raman scattering (SERS) measurements. The LSPR can be easily tuned from 580 to 743 nm by changing the sputtering power of Cu2S in the Ag and Cu2S composite substrate. During this process, surprisingly, we find that the LSPR is proportional to the sputtering power of Cu2S. This observation indicates that LSPR can be accurately adjusted by changing the content of the semiconductor, or even the carrier density. Moreover, we characterize the carrier density through the detection of the Hall effect to analyze the Raman shift caused by CT and obtain the relationships between them. These fundamental discussions provide a guideline for tunable LSPR and the investigation of CT.
关键词	enhanced raman-scattering photonic microarray sers nanoparticles spectroscopy system catalysis Chemistry Science & Technology - Other Topics Materials Science Physics
DOI	10.1021/acs.jpclett.8b02416
关键词[WOS]	ENHANCED RAMAN-SCATTERING ; PHOTONIC MICROARRAY ; SERS ; NANOPARTICLES ; SPECTROSCOPY ; SYSTEM ; CATALYSIS
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[61775081] ; National Natural Science Foundation of China[61575080] ; National Natural Science Foundation of China[61405072] ; Program for the development of Science and Technology of Jilin Province[20150519024JH]
项目资助者	National Natural Science Foundation of China ; Program for the development of Science and Technology of Jilin Province
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Atomic, Molecular & Chemical
WOS记录号	WOS:000448751700021
出版者	AMER CHEMICAL SOC
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60440
专题	中国科学院长春光学精密机械与物理研究所
通讯作者	Yang, Jinghai; Chen, Lei
作者单位	1.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Jilin, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Jilin Normal Univ, Key Lab Funct Mat Phys & Chem, Minist Educ, Changchun 130103, Jilin, Peoples R China 4.Changchun Univ Sci & Technol, Sch Mat Sci & Engn, Changchun 130022, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Xin-Yuan,Han, Donglai,Ma, Ning,et al. Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2018,9(20):6047-6051.
APA	Zhang, Xin-Yuan.,Han, Donglai.,Ma, Ning.,Gao, Renxian.,Zhu, Aonan.,...&Chen, Lei.(2018).Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,9(20),6047-6051.
MLA	Zhang, Xin-Yuan,et al."Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 9.20(2018):6047-6051.

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