2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices

doi:10.1002/adma.201802207

CIOMP OpenIR

	2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices
	Zhang, Jia Lin 1; Han, Cheng 2,3; Hu, Zehua 3; Wang, Li4,5 ; Liu, Lei6 ; Wee, Andrew T. S.3; Chen, Wei1,2,3,7
	2018-11-22
发表期刊	ADVANCED MATERIALS
ISSN	0935-9648
卷号	30 期号:47 页码:11
通讯作者	Chen, Wei(phycw@nus.edu.sg)
摘要	Black phosphorus (BP), first synthesized in 1914 and rediscovered as a new member of the family of 2D materials in 2014, combines many extraordinary properties of graphene and transition-metal dichalcogenides, such as high charge-carrier mobility, and a tunable direct bandgap. In addition, it displays other distinguishing properties, e.g., ambipolar transport and highly anisotropic properties. The successful application of BP in electronic and optoelectronic devices has stimulated significant research interest in other allotropes and alloys of 2D phosphorene, a class of 2D materials consisting of elemental phosphorus. As an atomically thin sheet, the various interfaces presented in 2D phosphorene (substrate/phosphorene, electrode/phosphorene, dielectric/phosphorene, atmosphere/phosphorene) play dominant roles in its bottom-up synthesis, and determine several key characteristics for the devices, such as carrier injection, carrier transport, carrier concentration, and device stability. The rational design/engineering of interfaces provides an effective way to manipulate the growth of 2D phosphorene, and modulate its electronic and optoelectronic properties to realize high-performance multifunctional devices. Here, recent progress of the interface engineering of 2D phosphorene is highlighted, including the epitaxial growth of single-layer blue phosphorus on different substrates, surface functionalization of BP for high-performance complementary devices, and the investigation of the BP degradation mechanism in ambient air.
关键词	2D phosphorene electronic devices epitaxial growth interface engineering
DOI	10.1002/adma.201802207
关键词[WOS]	LAYER BLACK PHOSPHORUS ; FIELD-EFFECT TRANSISTORS ; 2-DIMENSIONAL MATERIALS ; TRANSPORT-PROPERTIES ; BAND-GAP ; SURFACE FUNCTIONALIZATION ; AMBIENT DEGRADATION ; QUANTUM CONFINEMENT ; CARRIER MOBILITY ; BLUE PHOSPHORUS
收录类别	SCI
语种	英语
资助项目	NSFC[21573156] ; Natural Science Foundation of Jiangsu Province[BK20170005] ; National Science Fund for Distinguished Young Scholars of China[61525404] ; Singapore MOE Grant[R143-000-652-112] ; Fundamental Research Foundation of Shenzhen[JCYJ20170817100405375] ; Shenzhen Peacock Plan[KQTD2016053112042971] ; Science and Technology Planning Project of Guangdong Province[2016B050501005] ; NSFC[21573156] ; Natural Science Foundation of Jiangsu Province[BK20170005] ; National Science Fund for Distinguished Young Scholars of China[61525404] ; Singapore MOE Grant[R143-000-652-112] ; Fundamental Research Foundation of Shenzhen[JCYJ20170817100405375] ; Shenzhen Peacock Plan[KQTD2016053112042971] ; Science and Technology Planning Project of Guangdong Province[2016B050501005] ; NSFC[21573156] ; Natural Science Foundation of Jiangsu Province[BK20170005] ; National Science Fund for Distinguished Young Scholars of China[61525404] ; Singapore MOE Grant[R143-000-652-112] ; Fundamental Research Foundation of Shenzhen[JCYJ20170817100405375] ; Shenzhen Peacock Plan[KQTD2016053112042971] ; Science and Technology Planning Project of Guangdong Province[2016B050501005] ; NSFC[21573156] ; Natural Science Foundation of Jiangsu Province[BK20170005] ; National Science Fund for Distinguished Young Scholars of China[61525404] ; Singapore MOE Grant[R143-000-652-112] ; Fundamental Research Foundation of Shenzhen[JCYJ20170817100405375] ; Shenzhen Peacock Plan[KQTD2016053112042971] ; Science and Technology Planning Project of Guangdong Province[2016B050501005]
项目资助者	NSFC ; Natural Science Foundation of Jiangsu Province ; National Science Fund for Distinguished Young Scholars of China ; Singapore MOE Grant ; Fundamental Research Foundation of Shenzhen ; Shenzhen Peacock Plan ; Science and Technology Planning Project of Guangdong Province
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000450371900013
出版者	WILEY-V C H VERLAG GMBH
引用统计	被引频次：89[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60303
专题	中国科学院长春光学精密机械与物理研究所
通讯作者	Chen, Wei
作者单位	1.Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore 2.Shenzhen Univ, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Shenzhen 518060, Peoples R China 3.Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore 4.Nanchang Univ, Inst Adv Study, 999 Xue Fu Da Dao, Nanchang 330031, Jiangxi, Peoples R China 5.Nanchang Univ, Dept Phys, 999 Xue Fu Da Dao, Nanchang 330031, Jiangxi, Peoples R China 6.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dongnanhu Rd, Changchun 130033, Jilin, Peoples R China 7.Natl Univ Singapore, Suzhou Res Inst, 377 Lin Quan St, Suzhou Industrial Pk 215123, Jiangsu, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Jia Lin,Han, Cheng,Hu, Zehua,et al. 2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices[J]. ADVANCED MATERIALS,2018,30(47):11.
APA	Zhang, Jia Lin.,Han, Cheng.,Hu, Zehua.,Wang, Li.,Liu, Lei.,...&Chen, Wei.(2018).2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices.ADVANCED MATERIALS,30(47),11.
MLA	Zhang, Jia Lin,et al."2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices".ADVANCED MATERIALS 30.47(2018):11.