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Exciton-polariton light-emitting diode based on a ZnO microwire
Zhang, Z.; Y. L. Wang; S. Y. Yin; T. Hu; Y. F. Wang; L. M. Liao; S. Luo; J. Wang; X. Y. Zhang; P. N. Ni; X. C. Shen; C. X. Shan and Z. H. Chen
2017
Source PublicationOptics Express
Volume25Issue:15
AbstractRoom temperature electrically pumped exciton-polariton light-emitting diode (LED) based on the n-ZnO microwire/MgO/p-GaN heterojunction was fabricated. With the injection current of 1.5 mA, the ultraviolet electroluminescence centered at wavelength of 400 nm is obtained. The whispering gallery cavity model combined with the coupling oscillator model is used to describe the emission intensity modulation, from which the strong coupling regime of the system is proved to be surviving at room temperature. (C) 2017 Optical Society of America
Indexed Bysci ; ei
Language英语
WOS IDWOS:000408584400042
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Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59466
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Zhang, Z.,Y. L. Wang,S. Y. Yin,et al. Exciton-polariton light-emitting diode based on a ZnO microwire[J]. Optics Express,2017,25(15).
APA Zhang, Z..,Y. L. Wang.,S. Y. Yin.,T. Hu.,Y. F. Wang.,...&C. X. Shan and Z. H. Chen.(2017).Exciton-polariton light-emitting diode based on a ZnO microwire.Optics Express,25(15).
MLA Zhang, Z.,et al."Exciton-polariton light-emitting diode based on a ZnO microwire".Optics Express 25.15(2017).
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