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Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure
Yu, Q. N.; Y. Jia; W. Lu; M. Q. Wang; F. Li; J. Zhang; X. Zhang; Y. Q. Ning and J. Wu
2017
发表期刊Aip Advances
卷号7期号:8
摘要In this paper, an experimental approach to acquiring true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure is described. This method is based on a single edge-emitting laser chip with simple sample processing. The photoluminescence spectra are measured at both facets of the edge-emitting device and transformed to the spontaneous emission rate following the theory described here. The unusual double peaks appearing in the spontaneous emission rate spectra are observed for the InGaAs/GaAs quantum-well structure. The result is analyzed in terms of Indium-rich island and Model-Solid theories. The proposed method is suitable for electrically-pumped quantum-well laser structures, as well. (C) 2017 Author(s).
收录类别sci ; ei
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/59402
专题中科院长春光机所知识产出
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GB/T 7714
Yu, Q. N.,Y. Jia,W. Lu,et al. Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure[J]. Aip Advances,2017,7(8).
APA Yu, Q. N..,Y. Jia.,W. Lu.,M. Q. Wang.,F. Li.,...&Y. Q. Ning and J. Wu.(2017).Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure.Aip Advances,7(8).
MLA Yu, Q. N.,et al."Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure".Aip Advances 7.8(2017).
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