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All-Aluminum Thin Film Transistor Fabrication at Room Temperature
Yao, R. H.; Z. K. Zheng; Y. Zeng; X. Z. Liu; H. L. Ning; S. B. Hu; R. Q. Tao; J. Q. Chen; W. Cai; M. Xu; L. Wang; L. F. Lan and J. B. Peng
Source PublicationMaterials
AbstractBottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM) and X-ray reflectivity (XRR) revealed the smooth interfaces between similar to 2.2-nm-thick Al2O3 layers and similar to 2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al: Nd) and pure Al, with Al2O3/AZO multilayered channel and AlOx: Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm(2)/V.s and an I-on/I-off ratio of 10(6). All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.
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Document Type期刊论文
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GB/T 7714
Yao, R. H.,Z. K. Zheng,Y. Zeng,et al. All-Aluminum Thin Film Transistor Fabrication at Room Temperature[J]. Materials,2017,10(3).
APA Yao, R. H..,Z. K. Zheng.,Y. Zeng.,X. Z. Liu.,H. L. Ning.,...&L. F. Lan and J. B. Peng.(2017).All-Aluminum Thin Film Transistor Fabrication at Room Temperature.Materials,10(3).
MLA Yao, R. H.,et al."All-Aluminum Thin Film Transistor Fabrication at Room Temperature".Materials 10.3(2017).
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