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On-Chip Integration Operating Under the Extraordinary Light Detection Mode of an InGaN/GaN Diode
Yang, Y. C.; X. M. Gao; J. L. Yuan; Y. H. Li; Z. Y. Zhang and Y. J. Wang
2017
Source PublicationIeee Photonics Technology Letters
Volume29Issue:5
AbstractIn this letter, we build an on-chip photonic integration system on a GaN-on-silicon platform. Using silicon removal and back wafer etching techniques, two suspended InGaN/GaN multiple-quantum-well diodes (MQWDs), which are connected by suspended waveguides, are fabricated as a transmitter and a receiver, respectively, in the on-chip photonic integration system. The 100-mu m-long, 2-mu m-high, and 3-mu m-wide suspended waveguides are adopted for light coupling and transmission between the transmitter and the receiver. When the transmitter emits light, the InGaN/GaN MQWD simultaneously exhibits an extraordinary light detection mechanism in which the light-induced electron-hole pairs are greatly increased and can be rapidly cancelled by the injection current. The on-chip photonic integration system experimentally demonstrates the significantly improved 3-dB bandwidth and data transport performances when the receiver operates under the simultaneous light emission and detection mode.
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59388
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Yang, Y. C.,X. M. Gao,J. L. Yuan,et al. On-Chip Integration Operating Under the Extraordinary Light Detection Mode of an InGaN/GaN Diode[J]. Ieee Photonics Technology Letters,2017,29(5).
APA Yang, Y. C.,X. M. Gao,J. L. Yuan,Y. H. Li,&Z. Y. Zhang and Y. J. Wang.(2017).On-Chip Integration Operating Under the Extraordinary Light Detection Mode of an InGaN/GaN Diode.Ieee Photonics Technology Letters,29(5).
MLA Yang, Y. C.,et al."On-Chip Integration Operating Under the Extraordinary Light Detection Mode of an InGaN/GaN Diode".Ieee Photonics Technology Letters 29.5(2017).
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