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An extending broadband near-infrared absorption of Si-based deep-trench microstructures
Yang, H. G.; X. Y. Liu; J. S. Gao; X. Y. Wang; H. Liu and Z. Zhang
2017
发表期刊Optics Communications
卷号392
摘要We design and investigate numerically a Si-based deep-trench microstructure covered with continuous thin gold (Au) films. It breaks through the absorption limitation of Si material and greatly extends the near-infrared (NIR) absorption range to 1500 nm. By the simulated distributions of electric-field intensity, we observe clearly the excitation of surface plasmon polaritons and the standing wave resonance of plasmon cavity formed inside the deep trench, by which we explain the extending broadband MR absorption well. We further discuss the influence of trench depth on the cavity mode and MR absorption in detail. By combination of the proposed microstructures, it is a promising approach to realize an extending broadband and high MR photoresponse in Si-based detectors.
收录类别sci ; ei
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/59375
专题中科院长春光机所知识产出
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Yang, H. G.,X. Y. Liu,J. S. Gao,et al. An extending broadband near-infrared absorption of Si-based deep-trench microstructures[J]. Optics Communications,2017,392.
APA Yang, H. G.,X. Y. Liu,J. S. Gao,X. Y. Wang,&H. Liu and Z. Zhang.(2017).An extending broadband near-infrared absorption of Si-based deep-trench microstructures.Optics Communications,392.
MLA Yang, H. G.,et al."An extending broadband near-infrared absorption of Si-based deep-trench microstructures".Optics Communications 392(2017).
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