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Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step
Tao, M.; J. Guan; F. L. Gao; L. L. Gao and J. S. Cao
2017
Source PublicationChinese Journal of Electronics
Volume26Issue:3
AbstractFor the large driving current of high-power semiconductor Laser diodes (LDs), a modified method to measure the electrical derivative of LDs under scanning driving current with variable step length is proposed, which is to achieve the fast and accurate measurement of optical and electrical characteristic parameters of LDs with a relatively small data acquisition. The experimental results show that, with fewer measurements, this method can effectively and accurately measure and extract the LDs corresponding parameters including threshold current (I-th), voltage-current characteristic (V-I), luminous power-current relation (P-I), electrical derivative curve (IdV/dI-I). The wavelet transformation singularity testing results of the threshold current also verify the accuracy, reliability, and advantage of this method.
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59217
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Tao, M.,J. Guan,F. L. Gao,et al. Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step[J]. Chinese Journal of Electronics,2017,26(3).
APA Tao, M.,J. Guan,F. L. Gao,&L. L. Gao and J. S. Cao.(2017).Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step.Chinese Journal of Electronics,26(3).
MLA Tao, M.,et al."Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step".Chinese Journal of Electronics 26.3(2017).
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