Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step

	Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step
	Tao, M.; J. Guan; F. L. Gao; L. L. Gao and J. S. Cao
	2017
发表期刊	Chinese Journal of Electronics
卷号	26 期号:3
摘要	For the large driving current of high-power semiconductor Laser diodes (LDs), a modified method to measure the electrical derivative of LDs under scanning driving current with variable step length is proposed, which is to achieve the fast and accurate measurement of optical and electrical characteristic parameters of LDs with a relatively small data acquisition. The experimental results show that, with fewer measurements, this method can effectively and accurately measure and extract the LDs corresponding parameters including threshold current (I-th), voltage-current characteristic (V-I), luminous power-current relation (P-I), electrical derivative curve (IdV/dI-I). The wavelet transformation singularity testing results of the threshold current also verify the accuracy, reliability, and advantage of this method.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59217
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Tao, M.,J. Guan,F. L. Gao,et al. Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step[J]. Chinese Journal of Electronics,2017,26(3).
APA	Tao, M.,J. Guan,F. L. Gao,&L. L. Gao and J. S. Cao.(2017).Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step.Chinese Journal of Electronics,26(3).
MLA	Tao, M.,et al."Electrical Derivative Measurement of High-Power InGaAs LDs Under Scanning Current with Variable Step".Chinese Journal of Electronics 26.3(2017).

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