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Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition
Sun, L.; H. L. Lu; H. Y. Chen; T. Wang; X. M. Ji; W. J. Liu; D. X. Zhao; A. Devi; S. J. Ding and D. W. Zhang
2017
Source PublicationNanoscale Research Letters
Volume12
AbstractThe influences of annealing temperature in N-2 atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual H2O in N-2 atmosphere reacting with AlN film during the annealing treatment. Accordingly, the Si-N bonding at the interface gradually transforms to Si-O bonding with the increasing temperature due to the diffusion of oxygen from AlN film to the Si substrate. Specially, the Si-O-AI bonding state can be detected in the 900 degrees C-annealed sample. Furthermore, it is determined that the band gap and valence band offset increase with increasing annealing temperature.
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59202
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Sun, L.,H. L. Lu,H. Y. Chen,et al. Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition[J]. Nanoscale Research Letters,2017,12.
APA Sun, L..,H. L. Lu.,H. Y. Chen.,T. Wang.,X. M. Ji.,...&S. J. Ding and D. W. Zhang.(2017).Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition.Nanoscale Research Letters,12.
MLA Sun, L.,et al."Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition".Nanoscale Research Letters 12(2017).
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