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Damage accumulation effects of multiple laser pulses irradiated on charged coupled device
Shao, J.; J. Guo; T. Wang and C. Zheng
2017
发表期刊Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
卷号46期号:10
摘要Experimental research on pulsed nanosecond laser irradiation on Charged Coupled Devie was carried out to understand the damage and blindness mechanism of multiple pulses interaction with EO systems. The results showed two distinctive damage effects and mechanisms. It exhibited damage and blindness accumulation effects and damage threshold reducing outcomes with multiple pulses arriving at the same spot on CCD, including point-to-line damage and line-to-full frame blindness. The threshold reducing outcomes is closely related with pulse number and laser fluence with the same mechanism as single short blindness. However, the damage mechanism for multiple-pulse damage to different pixels is obviously different, which attributes to a multiple vertical line damage superposed effect without electrical disorder. The functional blindness threshold is indentified with line damage threshold 660 mJ/cm2, and evidently less than that of single-pulse blindness threshold 1 500-2 200 mJ/cm2. 2017, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.
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语种中文
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/59171
专题中科院长春光机所知识产出
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Shao, J.,J. Guo,T. Wang and C. Zheng. Damage accumulation effects of multiple laser pulses irradiated on charged coupled device[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2017,46(10).
APA Shao, J.,J. Guo,&T. Wang and C. Zheng.(2017).Damage accumulation effects of multiple laser pulses irradiated on charged coupled device.Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,46(10).
MLA Shao, J.,et al."Damage accumulation effects of multiple laser pulses irradiated on charged coupled device".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 46.10(2017).
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