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Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film
Ning, H. L.; X. Z. Liu; H. K. Zhang; Z. Q. Fang; W. Cai; J. Q. Chen; R. H. Yao; M. Xu; L. Wang; L. F. Lan; J. B. Peng; X. F. Wang and Z. C. Zhang
2017
发表期刊Materials
卷号10期号:1
摘要The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO) films have been investigated. Since a state of tensile stress is available in as-deposited films, the value of stress can be exponentially enhanced when the annealing temperature is increased. The tensile stress is able to not only suppress the crystallization and widen the optical band gap of STO films, but also reduce defects of STO films. In this report, the good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 degrees C. This includes a value of saturation mobility that can be reached at 6.7 cm(2)/Vs, a ratio of I-on/I-off as 7.34 x 107, a steep sub-threshold swing at 0.625 V/decade, and a low trap density of 7.96 x 1011 eV(-1).cm(-2), respectively.
收录类别sci ; ei
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/59145
专题中科院长春光机所知识产出
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Ning, H. L.,X. Z. Liu,H. K. Zhang,et al. Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film[J]. Materials,2017,10(1).
APA Ning, H. L..,X. Z. Liu.,H. K. Zhang.,Z. Q. Fang.,W. Cai.,...&X. F. Wang and Z. C. Zhang.(2017).Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film.Materials,10(1).
MLA Ning, H. L.,et al."Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film".Materials 10.1(2017).
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