Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure

	Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure
	Miao, B.; J. Zhang; X. Z. Ding; D. M. Wu; Y. H. Wu; W. H. Lu and J. D. Li
	2017
发表期刊	Journal of Micromechanics and Microengineering
卷号	27 期号:5
摘要	This paper presents a preliminary result about ultra-deep etched microstructures on < 1 0 0 > silicon wafer based on metal assisted chemical etching (MaCE). Honeycomb hole arrays with 50 mu m width were successfully etched, as deep as 280 mu m. The porous defects on the patterned surface and the lateral etching on the sidewall were effectively suppressed by optimizing the etchant solution. The results in this paper indicate that < 1 0 0 > silicon can be etched vertically with smooth sidewalls by an etchant solution containing ethanol, instead of the conventional aqueous-based solution. This improved method of MaCE has potential application in large-scale Si etching as a supplementary method to the expensive and complicated dry etching method.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59140
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Miao, B.,J. Zhang,X. Z. Ding,et al. Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure[J]. Journal of Micromechanics and Microengineering,2017,27(5).
APA	Miao, B.,J. Zhang,X. Z. Ding,D. M. Wu,Y. H. Wu,&W. H. Lu and J. D. Li.(2017).Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure.Journal of Micromechanics and Microengineering,27(5).
MLA	Miao, B.,et al."Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure".Journal of Micromechanics and Microengineering 27.5(2017).

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