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Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure
Miao, B.; J. Zhang; X. Z. Ding; D. M. Wu; Y. H. Wu; W. H. Lu and J. D. Li
2017
Source PublicationJournal of Micromechanics and Microengineering
Volume27Issue:5
AbstractThis paper presents a preliminary result about ultra-deep etched microstructures on < 1 0 0 > silicon wafer based on metal assisted chemical etching (MaCE). Honeycomb hole arrays with 50 mu m width were successfully etched, as deep as 280 mu m. The porous defects on the patterned surface and the lateral etching on the sidewall were effectively suppressed by optimizing the etchant solution. The results in this paper indicate that < 1 0 0 > silicon can be etched vertically with smooth sidewalls by an etchant solution containing ethanol, instead of the conventional aqueous-based solution. This improved method of MaCE has potential application in large-scale Si etching as a supplementary method to the expensive and complicated dry etching method.
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59140
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Miao, B.,J. Zhang,X. Z. Ding,et al. Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure[J]. Journal of Micromechanics and Microengineering,2017,27(5).
APA Miao, B.,J. Zhang,X. Z. Ding,D. M. Wu,Y. H. Wu,&W. H. Lu and J. D. Li.(2017).Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure.Journal of Micromechanics and Microengineering,27(5).
MLA Miao, B.,et al."Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure".Journal of Micromechanics and Microengineering 27.5(2017).
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