Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure | |
| Miao, B.; J. Zhang; X. Z. Ding; D. M. Wu; Y. H. Wu; W. H. Lu and J. D. Li | |
| 2017 | |
| Source Publication | Journal of Micromechanics and Microengineering
 |
| Volume | 27Issue:5 |
| Abstract | This paper presents a preliminary result about ultra-deep etched microstructures on < 1 0 0 > silicon wafer based on metal assisted chemical etching (MaCE). Honeycomb hole arrays with 50 mu m width were successfully etched, as deep as 280 mu m. The porous defects on the patterned surface and the lateral etching on the sidewall were effectively suppressed by optimizing the etchant solution. The results in this paper indicate that < 1 0 0 > silicon can be etched vertically with smooth sidewalls by an etchant solution containing ethanol, instead of the conventional aqueous-based solution. This improved method of MaCE has potential application in large-scale Si etching as a supplementary method to the expensive and complicated dry etching method. |
| Indexed By | sci ; ei |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.ciomp.ac.cn/handle/181722/59140 |
| Collection | 中科院长春光机所知识产出 |
| Recommended Citation GB/T 7714 | Miao, B.,J. Zhang,X. Z. Ding,et al. Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure[J]. Journal of Micromechanics and Microengineering,2017,27(5). |
| APA | Miao, B.,J. Zhang,X. Z. Ding,D. M. Wu,Y. H. Wu,&W. H. Lu and J. D. Li.(2017).Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure.Journal of Micromechanics and Microengineering,27(5). |
| MLA | Miao, B.,et al."Improved metal assisted chemical etching method for uniform, vertical and deep silicon structure".Journal of Micromechanics and Microengineering 27.5(2017). |
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| Improved metal assis（1192KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Download | |
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