Broad-area laser diodes with on-chip combined angled cavity

	Broad-area laser diodes with on-chip combined angled cavity
	Lu, Z. F.; L. J. Wang; Z. D. Zhao; S. L. Shu; G. Y. Hou; H. Y. Lu; S. C. Tian; C. Z. Tong and L. J. Wang
	2017
发表期刊	Chinese Optics Letters
卷号	15 期号:8
摘要	Broad-area diode lasers usually supply high output power but low lateral beam quality. In this Letter, an on-chip combined angled cavity is proposed to realize narrow lateral far field patterns and high brightness. The influence of included angles, emitting facets on output power, and beam quality are investigated. It demonstrates that this V-junction laser is able to achieve a single-lobe far field at optimal cavity length with a 3.4 times improvement in brightness compared with Fabry-Perot (F-P) cavity lasers. The excited high-order modes at a high injection level reduce the brightness, but it is still 107% higher than that of F-P lasers.
收录类别	sci ; ei
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/59126
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Lu, Z. F.,L. J. Wang,Z. D. Zhao,et al. Broad-area laser diodes with on-chip combined angled cavity[J]. Chinese Optics Letters,2017,15(8).
APA	Lu, Z. F..,L. J. Wang.,Z. D. Zhao.,S. L. Shu.,G. Y. Hou.,...&C. Z. Tong and L. J. Wang.(2017).Broad-area laser diodes with on-chip combined angled cavity.Chinese Optics Letters,15(8).
MLA	Lu, Z. F.,et al."Broad-area laser diodes with on-chip combined angled cavity".Chinese Optics Letters 15.8(2017).

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