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Broad-area laser diodes with on-chip combined angled cavity
Lu, Z. F.; L. J. Wang; Z. D. Zhao; S. L. Shu; G. Y. Hou; H. Y. Lu; S. C. Tian; C. Z. Tong and L. J. Wang
2017
Source PublicationChinese Optics Letters
Volume15Issue:8
AbstractBroad-area diode lasers usually supply high output power but low lateral beam quality. In this Letter, an on-chip combined angled cavity is proposed to realize narrow lateral far field patterns and high brightness. The influence of included angles, emitting facets on output power, and beam quality are investigated. It demonstrates that this V-junction laser is able to achieve a single-lobe far field at optimal cavity length with a 3.4 times improvement in brightness compared with Fabry-Perot (F-P) cavity lasers. The excited high-order modes at a high injection level reduce the brightness, but it is still 107% higher than that of F-P lasers.
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59126
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Lu, Z. F.,L. J. Wang,Z. D. Zhao,et al. Broad-area laser diodes with on-chip combined angled cavity[J]. Chinese Optics Letters,2017,15(8).
APA Lu, Z. F..,L. J. Wang.,Z. D. Zhao.,S. L. Shu.,G. Y. Hou.,...&C. Z. Tong and L. J. Wang.(2017).Broad-area laser diodes with on-chip combined angled cavity.Chinese Optics Letters,15(8).
MLA Lu, Z. F.,et al."Broad-area laser diodes with on-chip combined angled cavity".Chinese Optics Letters 15.8(2017).
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