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ZnO-based deep-ultraviolet light-emitting devices
Lu, Y. J.; Z. F. Shi; C. X. Shan and D. Z. Shen
2017
Source PublicationChinese Physics B
Volume26Issue:4
AbstractDeep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential applications. Zinc-oxide-based materials, which have wide bandgap and large exciton binding energy, have potential applications in high-performance DUV LEDs. To realize such optoelectronic devices, the modulation of the bandgap is required. This has been demonstrated by the developments of MgxZn(1-x)O and BexZn(1-x)O alloys for the larger bandgap materials. Many efforts have been made to obtain DUV LEDs, and promising successes have been achieved continuously. In this article, we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.
Indexed Bysci ; ei
Language英语
Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/59125
Collection中科院长春光机所知识产出
Recommended Citation
GB/T 7714
Lu, Y. J.,Z. F. Shi,C. X. Shan and D. Z. Shen. ZnO-based deep-ultraviolet light-emitting devices[J]. Chinese Physics B,2017,26(4).
APA Lu, Y. J.,Z. F. Shi,&C. X. Shan and D. Z. Shen.(2017).ZnO-based deep-ultraviolet light-emitting devices.Chinese Physics B,26(4).
MLA Lu, Y. J.,et al."ZnO-based deep-ultraviolet light-emitting devices".Chinese Physics B 26.4(2017).
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