Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing

	Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing
	Wang, Y. C.; J. S. Gao; H. G. Yang; X. Y. Wang and Z. F. Shen
	2016
发表期刊	Nanoscale Research Letters
卷号	11
摘要	We investigate the influence of spike-like microstructures formed on the silicon surface via fs-laser scanning with different-size on its near-infrared absorption from 1200 to 2500 nm. Although the infrared absorption of the small size microstructures is obviously lower than the large size, it can be further improved to 90 % by a large amount of random and irregular Ag nano particles from a subsequent deposition of Ag thin film. The origins of absorption enhancement are discussed and theoretically analyzed in detail.
文章类型	期刊
收录类别	SCI ; EI
语种	英语
WOS记录号	BMC:10.1186/s11671-016-1281-4
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/57265
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang, Y. C.,J. S. Gao,H. G. Yang,et al. Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing[J]. Nanoscale Research Letters,2016,11.
APA	Wang, Y. C.,J. S. Gao,H. G. Yang,&X. Y. Wang and Z. F. Shen.(2016).Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing.Nanoscale Research Letters,11.
MLA	Wang, Y. C.,et al."Compensating the Degradation of Near-Infrared Absorption of Black Silicon Caused by Thermal Annealing".Nanoscale Research Letters 11(2016).

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