In the silicon wet etching process, the "pseudo-mask" formed by the hydrogen bubbles generated during the etching process is the reason causing high surface roughness and poor surface quality. Based upon the ultrasonic mechanical effect and wettability enhanced by isopropyl alcohol (IPA), ultrasonic agitation and IPA were used to improve surface quality of Si (111) crystal plane during silicon wet etching process. The surface roughness R-q is smaller than 15 nm when using ultrasonic agitation and Rq is smaller than 7 nm when using IPA. When the range of IPA concentration (mass fraction, wt%) is 5-20%, the ultrasonic frequency is 100 kHz and the ultrasound intensity is 30-50 W/L, the surface roughness R-q is smaller than 2 nm when combining ultrasonic agitation and IPA. The surface roughness R-q is equal to 1 nm when the mass fraction of IPA, ultrasound intensity and the ultrasonic frequency is 20%, 50 W and 100 kHz respectively. The experimental results indicated that the combination of ultrasonic agitation and IPA could obtain a lower surface roughness of Si (111) crystal plane in silicon wet etching process. (C) 2015 Elsevier B.V. All rights reserved.
Jin, F. M.,C. Y. Liu,F. H. Hou,et al. Hexadecafluorophthalocyaninatocopper as an electron conductor for high-efficiency fullerene-free planar perovskite solar cells[J]. Solar Energy Materials and Solar Cells,2016,157.
APA
Jin, F. M..,C. Y. Liu.,F. H. Hou.,Q. G. Song.,Z. S. Su.,...&H. F. Zhao and W. L. Li.(2016).Hexadecafluorophthalocyaninatocopper as an electron conductor for high-efficiency fullerene-free planar perovskite solar cells.Solar Energy Materials and Solar Cells,157.
MLA
Jin, F. M.,et al."Hexadecafluorophthalocyaninatocopper as an electron conductor for high-efficiency fullerene-free planar perovskite solar cells".Solar Energy Materials and Solar Cells 157(2016).
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