Bandgap engineering of Magneli phase Tiinfn/infOinf2n-1/inf: Electron-hole self-compensation

	Bandgap engineering of Magneli phase Tiinfn/infOinf2n-1/inf: Electron-hole self-compensation
	Niu, M.; H. Tan; D. Cheng; Z. Sun and D. Cao
	2015
发表期刊	Journal of Chemical Physics
卷号	143 期号:5
摘要	An electron-hole self-compensation effect is revealed and confirmed in nitrogen doped Magneli phase Tiinfn/infOinf2n-1/inf (n = 7, 8, and 9) by using hybrid density functional theory calculations. We found that the self-compensation effect between the free electrons in Magneli phase Tiinfn/infOinf2n-1/inf (n = 7, 8, and 9) and the holes induced by p-type nitrogen doping could not only prevent the recombination of photo-generated electron-hole pairs, but also lead to an effective bandgap reduction. This novel electron-hole self-compensation effect may provide a new approach for bandgap engineering of Magneli phase metal suboxides. 2015 AIP Publishing LLC.
文章类型	期刊
收录类别	EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55903
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Niu, M.,H. Tan,D. Cheng,et al. Bandgap engineering of Magneli phase Tiinfn/infOinf2n-1/inf: Electron-hole self-compensation[J]. Journal of Chemical Physics,2015,143(5).
APA	Niu, M.,H. Tan,D. Cheng,&Z. Sun and D. Cao.(2015).Bandgap engineering of Magneli phase Tiinfn/infOinf2n-1/inf: Electron-hole self-compensation.Journal of Chemical Physics,143(5).
MLA	Niu, M.,et al."Bandgap engineering of Magneli phase Tiinfn/infOinf2n-1/inf: Electron-hole self-compensation".Journal of Chemical Physics 143.5(2015).

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