Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Bandgap engineering of Magneli phase Tiinfn/infOinf2n-1/inf: Electron-hole self-compensation | |
Niu, M.; H. Tan; D. Cheng; Z. Sun and D. Cao | |
2015 | |
发表期刊 | Journal of Chemical Physics |
卷号 | 143期号:5 |
摘要 | An electron-hole self-compensation effect is revealed and confirmed in nitrogen doped Magneli phase Tiinfn/infOinf2n-1/inf (n = 7, 8, and 9) by using hybrid density functional theory calculations. We found that the self-compensation effect between the free electrons in Magneli phase Tiinfn/infOinf2n-1/inf (n = 7, 8, and 9) and the holes induced by p-type nitrogen doping could not only prevent the recombination of photo-generated electron-hole pairs, but also lead to an effective bandgap reduction. This novel electron-hole self-compensation effect may provide a new approach for bandgap engineering of Magneli phase metal suboxides. 2015 AIP Publishing LLC. |
文章类型 | 期刊 |
收录类别 | EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/55903 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Niu, M.,H. Tan,D. Cheng,et al. Bandgap engineering of Magneli phase Tiinfn/infOinf2n-1/inf: Electron-hole self-compensation[J]. Journal of Chemical Physics,2015,143(5). |
APA | Niu, M.,H. Tan,D. Cheng,&Z. Sun and D. Cao.(2015).Bandgap engineering of Magneli phase Tiinfn/infOinf2n-1/inf: Electron-hole self-compensation.Journal of Chemical Physics,143(5). |
MLA | Niu, M.,et al."Bandgap engineering of Magneli phase Tiinfn/infOinf2n-1/inf: Electron-hole self-compensation".Journal of Chemical Physics 143.5(2015). |
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