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Strong Microwave Absorption of Hydrogenated Wide Bandgap Semiconductor Nanoparticles
Xia, T.; Y. H. Cao; N. A. Oyler; J. Murowchick; L. Liu and X. B. Chen
2015
发表期刊Acs Applied Materials & Interfaces
卷号7期号:19页码:10407-10413
摘要Electromagnetic interactions in the microelectronvolt (mu eV) or microwave region have numerous important applications in both civil and military fields, such as electronic communications, signal protection, and antireflective coatings on airplanes against microwave detection. Traditionally, nonmagnetic wide-bandgap metal oxide semiconductors lack these mu eV electronic transitions and applications. Here, we demonstrate that these metal oxides can be fabricated as good microwave absorbers using a 2D electron gas plasma resonance at the disorder/order interface generated by a hydrogenation process. Using ZnO and TiO2 nanoparticles as examples, we show that large absorption with reflection loss values as large as -49.0 dB (99.99999%) is obtained in the microwave region. The frequency of absorption can be tuned with the particle size and hydrogenation condition. These results may pave the way for new applications for wide bandgap semiconductors, especially in the mu eV regime.
收录类别SCI ; EI
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/55479
专题中科院长春光机所知识产出
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Xia, T.,Y. H. Cao,N. A. Oyler,et al. Strong Microwave Absorption of Hydrogenated Wide Bandgap Semiconductor Nanoparticles[J]. Acs Applied Materials & Interfaces,2015,7(19):10407-10413.
APA Xia, T.,Y. H. Cao,N. A. Oyler,J. Murowchick,&L. Liu and X. B. Chen.(2015).Strong Microwave Absorption of Hydrogenated Wide Bandgap Semiconductor Nanoparticles.Acs Applied Materials & Interfaces,7(19),10407-10413.
MLA Xia, T.,et al."Strong Microwave Absorption of Hydrogenated Wide Bandgap Semiconductor Nanoparticles".Acs Applied Materials & Interfaces 7.19(2015):10407-10413.
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