Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

	Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors
	Wu, S. H.; N. Zhang; Y. S. Hu; H. Chen; D. P. Jiang and X. Y. Liu
	2015
发表期刊	Chinese Physics B
卷号	24 期号:10 页码:5
摘要	Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55477
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wu, S. H.,N. Zhang,Y. S. Hu,et al. Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors[J]. Chinese Physics B,2015,24(10):5.
APA	Wu, S. H.,N. Zhang,Y. S. Hu,H. Chen,&D. P. Jiang and X. Y. Liu.(2015).Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors.Chinese Physics B,24(10),5.
MLA	Wu, S. H.,et al."Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors".Chinese Physics B 24.10(2015):5.

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