High brightness turquoise light-emitting diodes based on ZnO microwires

	High brightness turquoise light-emitting diodes based on ZnO microwires
	Wang, D. K.; F. Wang; B. Zhao; Y. P. Wang and D. X. Zhao
	2015
发表期刊	RSC Advances
卷号	5 期号:109 页码:89895-89899
摘要	ZnO microwire clusters have been fabricated by a chemical vapor deposition method on copper foil. Bright green luminescence was obtained when the sample was excited by an ultraviolet lamp. The mechanism of green luminescence and the relationship of point defect with emission were analyzed in detail. The quantum yield of green emission is 31%. Light emitting diodes were prepared based on ZnO microwires with a p-GaN or n-GaN film heterojunction. High brightness turquoise emission was obtained and the mechanism is discussed in this paper.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55457
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang, D. K.,F. Wang,B. Zhao,et al. High brightness turquoise light-emitting diodes based on ZnO microwires[J]. RSC Advances,2015,5(109):89895-89899.
APA	Wang, D. K.,F. Wang,B. Zhao,&Y. P. Wang and D. X. Zhao.(2015).High brightness turquoise light-emitting diodes based on ZnO microwires.RSC Advances,5(109),89895-89899.
MLA	Wang, D. K.,et al."High brightness turquoise light-emitting diodes based on ZnO microwires".RSC Advances 5.109(2015):89895-89899.