Recovering near-band-edge ultraviolet responses in a wide-bandgap oxide with dipole-forbidden bandgap transition

	Recovering near-band-edge ultraviolet responses in a wide-bandgap oxide with dipole-forbidden bandgap transition
	Deng, R.; Y. F. Li; B. Yao; Z. H. Ding; X. Fang; J. M. Qin; Z. P. Wei; Q. C. Liang and L. Liu
	2015
发表期刊	Journal of Alloys and Compounds
卷号	649 页码:625-629
摘要	High-density SnO2 nanobelts were synthesized on p-Si substrate to form a SnO2 nanobelts/p-Si heterojunction photodiode. The photodiode shows a rectification characteristic in current-voltage measurements and exhibits an ultraviolet peak responsivity with an ultraviolet-visible rejection ratio (R395 nm/R550 nm) of two orders of magnitude. The peak responsivity is located at around 395 nm (3.14 eV), much smaller than optical absorption edge of bulk SnO2 (similar to 344 nm, 3.6 eV). A strong ultraviolet peak from SnO2 nanobelts at similar to 400 nm was observed in the photoluminescence spectrum, indicating that the dipole-forbidden rule of bulk SnO2 is broken for the nanostructural counterparts. First-principles calculations suggest that surface state in nanostructure plays a key role in breaking dipole forbidden rule and realizing ultraviolet peak responsivity. (C) 2015 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/55213
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Deng, R.,Y. F. Li,B. Yao,et al. Recovering near-band-edge ultraviolet responses in a wide-bandgap oxide with dipole-forbidden bandgap transition[J]. Journal of Alloys and Compounds,2015,649:625-629.
APA	Deng, R..,Y. F. Li.,B. Yao.,Z. H. Ding.,X. Fang.,...&Q. C. Liang and L. Liu.(2015).Recovering near-band-edge ultraviolet responses in a wide-bandgap oxide with dipole-forbidden bandgap transition.Journal of Alloys and Compounds,649,625-629.
MLA	Deng, R.,et al."Recovering near-band-edge ultraviolet responses in a wide-bandgap oxide with dipole-forbidden bandgap transition".Journal of Alloys and Compounds 649(2015):625-629.

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