Changchun Institute of Optics,Fine Mechanics and Physics,CAS
V2O5/Ag/V2O5 multilayer transparent conductive films based on sol-gel and electron beam evaporation techniques | |
Zuo J.; Guo X.-Y.; Liu X.-Y. | |
2014 | |
发表期刊 | Faguang Xuebao/中文 Journal of Luminescence
![]() |
ISSN | ISBN/10007032 |
卷号 | 35期号:3页码:360-365 |
摘要 | V2O5/Ag/V2O5 (VAV) multi-layer transparent conductive film was prepared by the combination of sol-gel technique and electron beam evaporation at room temperature. The effects of each layer's thickness on photoelectrical properties and surface appearance of multi-layers were studied by atomic force microscope, UV-Vis spectrophotometer, four-point probe method and Kelvin probe. The experiments results reveal that the multi-layer transparent conductive film has desirable photo-electrical properties with average transmission of 75%(380~780 nm), mobility of 16.89 cm2/(Vs), carrier concentration of -1.0431022 cm-3, the sheet resistance of 15.1 /, and work function of 5.17 eV. This method reduces the difficulty of fabricating V2O5/Ag/V2O5 multi-layer films, providing a kind of promising transparent electrode for solar cells. |
收录类别 | EI |
语种 | 中文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/44501 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zuo J.,Guo X.-Y.,Liu X.-Y.. V2O5/Ag/V2O5 multilayer transparent conductive films based on sol-gel and electron beam evaporation techniques[J]. Faguang Xuebao/中文 Journal of Luminescence,2014,35(3):360-365. |
APA | Zuo J.,Guo X.-Y.,&Liu X.-Y..(2014).V2O5/Ag/V2O5 multilayer transparent conductive films based on sol-gel and electron beam evaporation techniques.Faguang Xuebao/中文 Journal of Luminescence,35(3),360-365. |
MLA | Zuo J.,et al."V2O5/Ag/V2O5 multilayer transparent conductive films based on sol-gel and electron beam evaporation techniques".Faguang Xuebao/中文 Journal of Luminescence 35.3(2014):360-365. |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Randon变换在区域结构函数坍陷中的应(309KB) | 开放获取 | CC BY-ND | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论