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Magnetic and Transport Properties of Mn0.98Cr0.02Te Epitaxial Films Grown on Al2O3 Substrates
Wang Z. H.; Geng D. Y.; Li J.; Li Y. B.; Zhang Z. D.
2014
发表期刊Journal of Materials Science & Technology
ISSNISBN/1005-0302
卷号30期号:2页码:103-106
摘要The epitaxial Mn0.98Cr0.02Te films on single crystal Al2O3 (0001) substrates were prepared by pulsed laser deposition. The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 degrees C. When the substrate temperature reached 700 degrees C, the film was island growth and the manganese oxides phase appeared. The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magnetoelastic coupling. The temperature dependence of the electrical resistance of Mn0.98Cr0.02Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/44138
专题中科院长春光机所知识产出
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Wang Z. H.,Geng D. Y.,Li J.,et al. Magnetic and Transport Properties of Mn0.98Cr0.02Te Epitaxial Films Grown on Al2O3 Substrates[J]. Journal of Materials Science & Technology,2014,30(2):103-106.
APA Wang Z. H.,Geng D. Y.,Li J.,Li Y. B.,&Zhang Z. D..(2014).Magnetic and Transport Properties of Mn0.98Cr0.02Te Epitaxial Films Grown on Al2O3 Substrates.Journal of Materials Science & Technology,30(2),103-106.
MLA Wang Z. H.,et al."Magnetic and Transport Properties of Mn0.98Cr0.02Te Epitaxial Films Grown on Al2O3 Substrates".Journal of Materials Science & Technology 30.2(2014):103-106.
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