Improved performance of ZnO light-emitting devices by introducing a hole-injection layer

	Improved performance of ZnO light-emitting devices by introducing a hole-injection layer
	Lu Y. J.; Li H. F.; Shan C. X.; Li B. H.; Shen D. Z.; Zhang L. G.; Yu S. F.
	2014
发表期刊	Optics Express
ISSN	ISBN/1094-4087
卷号	22 期号:14 页码:17524-17531
摘要	ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 mu W when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer. (C) 2014 Optical Society of America
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44065
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Lu Y. J.,Li H. F.,Shan C. X.,et al. Improved performance of ZnO light-emitting devices by introducing a hole-injection layer[J]. Optics Express,2014,22(14):17524-17531.
APA	Lu Y. J..,Li H. F..,Shan C. X..,Li B. H..,Shen D. Z..,...&Yu S. F..(2014).Improved performance of ZnO light-emitting devices by introducing a hole-injection layer.Optics Express,22(14),17524-17531.
MLA	Lu Y. J.,et al."Improved performance of ZnO light-emitting devices by introducing a hole-injection layer".Optics Express 22.14(2014):17524-17531.