Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Improved performance of ZnO light-emitting devices by introducing a hole-injection layer | |
Lu Y. J.; Li H. F.; Shan C. X.; Li B. H.; Shen D. Z.; Zhang L. G.; Yu S. F. | |
2014 | |
发表期刊 | Optics Express |
ISSN | ISBN/1094-4087 |
卷号 | 22期号:14页码:17524-17531 |
摘要 | ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 mu W when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer. (C) 2014 Optical Society of America |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/44065 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Lu Y. J.,Li H. F.,Shan C. X.,et al. Improved performance of ZnO light-emitting devices by introducing a hole-injection layer[J]. Optics Express,2014,22(14):17524-17531. |
APA | Lu Y. J..,Li H. F..,Shan C. X..,Li B. H..,Shen D. Z..,...&Yu S. F..(2014).Improved performance of ZnO light-emitting devices by introducing a hole-injection layer.Optics Express,22(14),17524-17531. |
MLA | Lu Y. J.,et al."Improved performance of ZnO light-emitting devices by introducing a hole-injection layer".Optics Express 22.14(2014):17524-17531. |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
oe-22-14-17524.pdf(1906KB) | 开放获取 | CC BY-ND | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论