Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer

	Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer
	Xu W.; Ji W. Y.; Jing P. T.; Yuan X.; Wang Y. A.; Xiang W. D.; Zhao J. L.
	2014
发表期刊	Optics Letters
ISSN	ISBN/0146-9592
卷号	39 期号:3 页码:426-429
摘要	We have demonstrated an efficient inverted CdSe/CdS/ZnS core/shell quantum-dot light-emitting device (QD-LED) using a solution-processed sol-gel TiO2 and ZnO nanoparticle composite layer as an electron-injection layer with controllable morphology and investigated the electroluminescence mechanism. The introduction of the ZnO layer can lead to the formation of spin-coated uniform QD films and fabrication of high-luminance QD-LEDs. The TiO2 layer improves the balance of charge injection due to its lower electron mobility relative to the ZnO layer. These results offer a practicable platform for the realization of a trade-off between the luminance and efficiency in the inverted QD-LEDs with TiO2/ZnO composites as the electron contact layer. (C) 2014 Optical Society of America
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/43947
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xu W.,Ji W. Y.,Jing P. T.,et al. Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer[J]. Optics Letters,2014,39(3):426-429.
APA	Xu W..,Ji W. Y..,Jing P. T..,Yuan X..,Wang Y. A..,...&Zhao J. L..(2014).Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer.Optics Letters,39(3),426-429.
MLA	Xu W.,et al."Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer".Optics Letters 39.3(2014):426-429.

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