A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films

	A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films
	Bi X.; Wu Y.; Wu J.; Li H.; Zhou L.
	2014
发表期刊	Journal of Materials Science: Materials in Electronics
ISSN	ISBN/09574522
卷号	25 期号:6 页码:2435-2442
摘要	This paper proposes a new model for the longitudinal piezoelectric coefficient (LPC) measurement of the aluminum nitride (AlN) thin film on (100) Si substrate, the AlN thin film is fabricated by the direct-current magnetron sputtering and the piezoelectricity of the AlN thin film is measured by the piezoresponse force microscopy (PFM) in contact mode. In this model, the electric field distribution is taken into account, and the electrostriction displacement caused by the local field concentration is excluded from the measured displacement by the PFM. A LPC value of 4.22 0.34 pm/V is obtained for the clamped AlN thin film by this model, and the deviation between this value and that measured under homogenous field condition is <5.7 %. Therefore, it is reasonable to apply our model to the piezoelectricity characterization of AlN thin films when using the PFM. Furthermore, piezoelectricity of other thin films could also be characterized using this model, which could simplify the measurement process. 2014 Springer Science+Business Media New York.
收录类别	EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/43679
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Bi X.,Wu Y.,Wu J.,et al. A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films[J]. Journal of Materials Science: Materials in Electronics,2014,25(6):2435-2442.
APA	Bi X.,Wu Y.,Wu J.,Li H.,&Zhou L..(2014).A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films.Journal of Materials Science: Materials in Electronics,25(6),2435-2442.
MLA	Bi X.,et al."A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films".Journal of Materials Science: Materials in Electronics 25.6(2014):2435-2442.

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