ZnO-based ultraviolet avalanche photodetectors

	ZnO-based ultraviolet avalanche photodetectors
	Yu J.; Shan C. X.; Huang X. M.; Zhang X. W.; Wang S. P.; Shen D. Z.
	2013
发表期刊	Journal of Physics D-Applied Physics
ISSN	ISBN/0022-3727
卷号	46 期号:30
摘要	By virtue of the carrier avalanche multiplication caused by an impact ionization process occurring in MgO insulation layer, zinc oxide (ZnO)-based ultraviolet (UV) avalanche photodetectors (APDs) have been fabricated from Au/MgO/ZnO/MgO/Au structures. The responsivity of APDs can reach 1.7 x 10(4) AW(-1), and the avalanche gain of the photodetectors is about 294 at 73 V. Considering that no previous report on ZnO APDs can be found, the results reported in this paper may promise a route to high-performance ZnO UV photodetectors.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40938
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu J.,Shan C. X.,Huang X. M.,et al. ZnO-based ultraviolet avalanche photodetectors[J]. Journal of Physics D-Applied Physics,2013,46(30).
APA	Yu J.,Shan C. X.,Huang X. M.,Zhang X. W.,Wang S. P.,&Shen D. Z..(2013).ZnO-based ultraviolet avalanche photodetectors.Journal of Physics D-Applied Physics,46(30).
MLA	Yu J.,et al."ZnO-based ultraviolet avalanche photodetectors".Journal of Physics D-Applied Physics 46.30(2013).