Changchun Institute of Optics,Fine Mechanics and Physics,CAS
ZnO-based ultraviolet avalanche photodetectors | |
Yu J.; Shan C. X.; Huang X. M.; Zhang X. W.; Wang S. P.; Shen D. Z. | |
2013 | |
发表期刊 | Journal of Physics D-Applied Physics |
ISSN | ISBN/0022-3727 |
卷号 | 46期号:30 |
摘要 | By virtue of the carrier avalanche multiplication caused by an impact ionization process occurring in MgO insulation layer, zinc oxide (ZnO)-based ultraviolet (UV) avalanche photodetectors (APDs) have been fabricated from Au/MgO/ZnO/MgO/Au structures. The responsivity of APDs can reach 1.7 x 10(4) AW(-1), and the avalanche gain of the photodetectors is about 294 at 73 V. Considering that no previous report on ZnO APDs can be found, the results reported in this paper may promise a route to high-performance ZnO UV photodetectors. |
收录类别 | SCI ; EI |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/40938 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Yu J.,Shan C. X.,Huang X. M.,et al. ZnO-based ultraviolet avalanche photodetectors[J]. Journal of Physics D-Applied Physics,2013,46(30). |
APA | Yu J.,Shan C. X.,Huang X. M.,Zhang X. W.,Wang S. P.,&Shen D. Z..(2013).ZnO-based ultraviolet avalanche photodetectors.Journal of Physics D-Applied Physics,46(30). |
MLA | Yu J.,et al."ZnO-based ultraviolet avalanche photodetectors".Journal of Physics D-Applied Physics 46.30(2013). |
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