Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

	Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode
	Deng R.; Yao B.; Li Y. F.; Xu Y.; Li J. C.; Li B. H.; Zhang Z. Z.; Zhang L. G.; Zhao H. F.; Shen D. Z.
	2013
发表期刊	Journal of Luminescence
ISSN	ISBN/0022-2313
期号	134
摘要	The n-ZnO/p-NiO heterojunction was prepared by depositing a p-type NiO film on a c-plane sapphire by rf magnetron sputtering and then growing a n-type ZnO film on the NiO film by plasma-assisted molecular beam epitaxy. The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of similar to 3.6 V and emits UV light upon putting a forward bias. The intensity of the UV emission increases as injection current increases from 0.5 to 3.5 mA, but the wavelength of the UV emission decreases from 404 to 387 nm. It is demonstrated that the UV emission comes from near band-edge radiative recombination of electron and hole in the ZnO layer. The mechanism of the UV electroluminescence is discussed in the present work. (c) 2012 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40921
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Deng R.,Yao B.,Li Y. F.,et al. Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode[J]. Journal of Luminescence,2013(134).
APA	Deng R..,Yao B..,Li Y. F..,Xu Y..,Li J. C..,...&Shen D. Z..(2013).Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode.Journal of Luminescence(134).
MLA	Deng R.,et al."Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode".Journal of Luminescence .134(2013).

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