A Study on the Sign Inversion Behavior of Organic Magnetoresistance

	A Study on the Sign Inversion Behavior of Organic Magnetoresistance
	Zhang T. Y.; Zhao J. Q.; Yan X. W.; Peng Q. M.; Fu G.
	2013
发表期刊	Ieee Electron Device Letters
ISSN	ISBN/0741-3106
卷号	34 期号:3
摘要	We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with amagnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines.
收录类别	SCI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40873
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang T. Y.,Zhao J. Q.,Yan X. W.,et al. A Study on the Sign Inversion Behavior of Organic Magnetoresistance[J]. Ieee Electron Device Letters,2013,34(3).
APA	Zhang T. Y.,Zhao J. Q.,Yan X. W.,Peng Q. M.,&Fu G..(2013).A Study on the Sign Inversion Behavior of Organic Magnetoresistance.Ieee Electron Device Letters,34(3).
MLA	Zhang T. Y.,et al."A Study on the Sign Inversion Behavior of Organic Magnetoresistance".Ieee Electron Device Letters 34.3(2013).

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