Changchun Institute of Optics,Fine Mechanics and Physics,CAS
A Study on the Sign Inversion Behavior of Organic Magnetoresistance | |
Zhang T. Y.; Zhao J. Q.; Yan X. W.; Peng Q. M.; Fu G. | |
2013 | |
发表期刊 | Ieee Electron Device Letters
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ISSN | ISBN/0741-3106 |
卷号 | 34期号:3 |
摘要 | We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with amagnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines. |
收录类别 | SCI |
语种 | 中文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/40873 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang T. Y.,Zhao J. Q.,Yan X. W.,et al. A Study on the Sign Inversion Behavior of Organic Magnetoresistance[J]. Ieee Electron Device Letters,2013,34(3). |
APA | Zhang T. Y.,Zhao J. Q.,Yan X. W.,Peng Q. M.,&Fu G..(2013).A Study on the Sign Inversion Behavior of Organic Magnetoresistance.Ieee Electron Device Letters,34(3). |
MLA | Zhang T. Y.,et al."A Study on the Sign Inversion Behavior of Organic Magnetoresistance".Ieee Electron Device Letters 34.3(2013). |
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