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Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets
Ma M. L.; Wu J.; Ning Y. Q.; Zhou F.; Yang M.; Zhang X.; Zhang J.; Shang G. Y.
2013
发表期刊Optics Express
ISSNISBN/1094-4087
卷号21期号:8
摘要In this letter, we describe a novel gain measurement approach for semiconductor edge-emitting lasers, with which TE and TM gain spectra can be easily obtained by collecting the amplified spontaneous emissions at dual facets of the device. An unstrained and continuously-operated GaAs/AlGaAs single quantum well laser strip is used to illustrate this method. The measured gain spectra are compared with theoretical gain curves to analyze the gain polarization characteristics and the relevant subband structure in the valence band of the well using the measured gain spectra. (C) 2013 Optical Society of America
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/40741
专题中科院长春光机所知识产出
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Ma M. L.,Wu J.,Ning Y. Q.,et al. Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets[J]. Optics Express,2013,21(8).
APA Ma M. L..,Wu J..,Ning Y. Q..,Zhou F..,Yang M..,...&Shang G. Y..(2013).Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets.Optics Express,21(8).
MLA Ma M. L.,et al."Measurement of gain characteristics of semiconductor lasers by amplified spontaneous emissions from dual facets".Optics Express 21.8(2013).
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