Interfacial dipole in organic p-n junction to realize write-once-read-many- times memory

	Interfacial dipole in organic p-n junction to realize write-once-read-many- times memory
	Wang L.; Su Z.; Wang C.
	2013
发表期刊	Organic Electronics: physics, materials, applications
ISSN	ISBN/15661199
卷号	14 期号:4
摘要	A new approach is exploited to realize nonvolatile organic write-once-read-many-times (WORM) memory based on copper phthalocyanine (CuPc)/hexadecafluoro-copper-phthalocyanine (F16CuPc) p-n junction. The as-fabricated device is found to be at its ON state and can be programmed irreversibly to the OFF state by applying a negative bias. The WORM device exhibits a high ON/OFF current ratio of up to 2.6 104. An interfacial dipole layer is testified to be formed and destructed at the p-n junction interface for the ON and OFF states, respectively. The ON state at positive voltage region is attributed to the efficient hole and electron injection from the respective electrodes and then recombination at the CuPc/F16CuPc interface, and the transition of the device to the OFF state results from the destruction of the interfacial dipole layer and formation of an insulating layer which restricts charge carrier recombination at the interface. 2013 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40719
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang L.,Su Z.,Wang C.. Interfacial dipole in organic p-n junction to realize write-once-read-many- times memory[J]. Organic Electronics: physics, materials, applications,2013,14(4).
APA	Wang L.,Su Z.,&Wang C..(2013).Interfacial dipole in organic p-n junction to realize write-once-read-many- times memory.Organic Electronics: physics, materials, applications,14(4).
MLA	Wang L.,et al."Interfacial dipole in organic p-n junction to realize write-once-read-many- times memory".Organic Electronics: physics, materials, applications 14.4(2013).

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