High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure

	High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure
	Ji W.; Jing P.; Xu W.; Yuan X.; Wang Y.; Zhao J.; Jen A. K. Y.
	2013
发表期刊	Applied Physics Letters
ISSN	ISBN/00036951
期号	103
摘要	Deep-blue, high color purity electroluminescence (EL) is demonstrated in an inverted light-emitting device using nontoxic ZnSe/ZnS core/shell quantum dots (QDs) as the emitter. The device exhibits moderate turn-on voltage (4.0 V) and color-saturated deep blue emission with a narrow full width at half maximum of 15 nm and emission peak at 441 nm. Their maximum luminance and current efficiency reach 1170 cd/m2 and 0.51 cd/A, respectively. The high performances are achieved through a ZnO nanoparticle based electron-transporting layer due to efficient electron injection into the ZnSe/ZnS QDs. Energy transfer processes between the ZnSe/ZnS QDs and hole-transporting materials are studied by time-resolved photoluminescence spectroscopy to understand the EL mechanism of the devices. These results provide a new guide for the fabrication of efficient deep-blue quantum dot light-emitting diodes and the realization of QD-based lighting sources and full-color panel displays. 2013 AIP Publishing LLC.
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40684
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ji W.,Jing P.,Xu W.,et al. High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure[J]. Applied Physics Letters,2013(103).
APA	Ji W..,Jing P..,Xu W..,Yuan X..,Wang Y..,...&Jen A. K. Y..(2013).High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure.Applied Physics Letters(103).
MLA	Ji W.,et al."High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure".Applied Physics Letters .103(2013).

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