An aluminum nitride photoconductor for X-ray detection

	An aluminum nitride photoconductor for X-ray detection
	Wang X.; Song H.; Li Z.; Jiang H.; Li D.; Miao G.; Chen Y.; Sun X.
	2012
发表期刊	Journal of Semiconductors
ISSN	16744926
卷号	33 期号:10
摘要	An AlN photoconductor for X-ray detection has been fabricated, and its response to X-ray irradiation intensity is studied. The photoconductor has a very low leakage current, less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation. The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity, and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor. By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed, and a reasonable interpretation of the physical mechanism is obtained. 2012 Chinese Institute of Electronics.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34578
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X.,Song H.,Li Z.,et al. An aluminum nitride photoconductor for X-ray detection[J]. Journal of Semiconductors,2012,33(10).
APA	Wang X..,Song H..,Li Z..,Jiang H..,Li D..,...&Sun X..(2012).An aluminum nitride photoconductor for X-ray detection.Journal of Semiconductors,33(10).
MLA	Wang X.,et al."An aluminum nitride photoconductor for X-ray detection".Journal of Semiconductors 33.10(2012).

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