Fabrication of p-Type Nitrogen-Doped MgZnO by Depressing N-Related Donors

	Fabrication of p-Type Nitrogen-Doped MgZnO by Depressing N-Related Donors
	Wei Z. P.; Yao B.; Li Y. F.; Shen D. Z.; Lu Y. M.; Zhang Z. Z.; Li B. H.; Zheng C. J.; Wang X. H.; Zhang J. Y.; Zhao D. X.; Fan X. W.; Tang Z. K.
	2008
发表期刊	Journal of the Korean Physical Society
ISSN	0374-4884
卷号	53 期号:5 页码:3043-3046
摘要	Wurtzite nitrogen-doped MgZnO (MgZnO:N) films were grown on c-plane sapphire by using plasma-assisted molecular beam epitaxy with radical NO as the oxygen source and nitrogen dopant. P-type conduction of MgZnO:N was obtained by decreasing the donor defects ((N-2)O, VO, etc.) through annealing, revealing a hole concentration of 6.1 x 10(17) cm(-3) and a mobility of 6.42 cm(2)/Vs. Furthermore, as-grown p-type films with a hole concentration of 1 x 10(17) cm(-3) and a mobility of 3 cm(2)/Vs were obtained by decreasing the (N-2)O double donor defect through control of the plasma conditions. ZnMgO:N/ZnO p-n junctions were obtained by using these p-type films. Diode-like, rectifying I- V characteristics with a threshold voltage of about 5 V and a different reverse leakage current were observed at room temperature.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34544
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wei Z. P.,Yao B.,Li Y. F.,et al. Fabrication of p-Type Nitrogen-Doped MgZnO by Depressing N-Related Donors[J]. Journal of the Korean Physical Society,2008,53(5):3043-3046.
APA	Wei Z. P..,Yao B..,Li Y. F..,Shen D. Z..,Lu Y. M..,...&Tang Z. K..(2008).Fabrication of p-Type Nitrogen-Doped MgZnO by Depressing N-Related Donors.Journal of the Korean Physical Society,53(5),3043-3046.
MLA	Wei Z. P.,et al."Fabrication of p-Type Nitrogen-Doped MgZnO by Depressing N-Related Donors".Journal of the Korean Physical Society 53.5(2008):3043-3046.

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