Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction | |
Xie X. H.; Zhang Z. Z.; Shan C. X.; Chen H. Y.; Shen D. Z. | |
2012 | |
发表期刊 | Applied Physics Letters |
ISSN | 0003-6951 |
卷号 | 101期号:8 |
摘要 | We report a dual-color ultraviolet (UV) photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction. The device exhibits distinct dominant responses at solar blind (250 nm) and visible blind (around 330 nm) UV regions under different reverse biases. By using the energy band diagram of the structure, it is found that the bias-tunable two-color detection is originated from different valence band offset between cubic MgZnO/MgO and hexagonal MgZnO/MgO. Meanwhile, due to the large conduction band offset at the Si/MgO interface, the visible-light photoresponse from Si substrate is suppressed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4746772] |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/34532 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Xie X. H.,Zhang Z. Z.,Shan C. X.,et al. Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction[J]. Applied Physics Letters,2012,101(8). |
APA | Xie X. H.,Zhang Z. Z.,Shan C. X.,Chen H. Y.,&Shen D. Z..(2012).Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction.Applied Physics Letters,101(8). |
MLA | Xie X. H.,et al."Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction".Applied Physics Letters 101.8(2012). |
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