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Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction
Xie X. H.; Zhang Z. Z.; Shan C. X.; Chen H. Y.; Shen D. Z.
2012
发表期刊Applied Physics Letters
ISSN0003-6951
卷号101期号:8
摘要We report a dual-color ultraviolet (UV) photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction. The device exhibits distinct dominant responses at solar blind (250 nm) and visible blind (around 330 nm) UV regions under different reverse biases. By using the energy band diagram of the structure, it is found that the bias-tunable two-color detection is originated from different valence band offset between cubic MgZnO/MgO and hexagonal MgZnO/MgO. Meanwhile, due to the large conduction band offset at the Si/MgO interface, the visible-light photoresponse from Si substrate is suppressed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4746772]
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/34532
专题中科院长春光机所知识产出
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Xie X. H.,Zhang Z. Z.,Shan C. X.,et al. Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction[J]. Applied Physics Letters,2012,101(8).
APA Xie X. H.,Zhang Z. Z.,Shan C. X.,Chen H. Y.,&Shen D. Z..(2012).Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction.Applied Physics Letters,101(8).
MLA Xie X. H.,et al."Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction".Applied Physics Letters 101.8(2012).
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