Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Microstructure studies of GaInAsSb/GaSb heterostructure | |
Zhang Z. Y.; Li S. W.; Zhang B. L.; Zhou T. M.; Jiang H.; Jin Y. X. | |
2000 | |
发表期刊 | Rare Metals
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ISSN | 1001-0521 |
卷号 | 19期号:1页码:34-38 |
摘要 | The preliminary results of scanning transmission electron microscope investigations on the interface of GaInAsSb/GaSb heterostructure were presented. STEM images show that the various dislocations and stacking faults were produced by the lattice mismatch between the quaternary GaInAsSb alloy and GaSb substrates. All these defects were the ways for relieving the misfit strain, including 60 degrees dislocation, 90 degrees dislocation and stacking faults. It is also found that only the 90 degrees dislocation can form the ridges on the surface of the epilayer. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/34444 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang Z. Y.,Li S. W.,Zhang B. L.,et al. Microstructure studies of GaInAsSb/GaSb heterostructure[J]. Rare Metals,2000,19(1):34-38. |
APA | Zhang Z. Y.,Li S. W.,Zhang B. L.,Zhou T. M.,Jiang H.,&Jin Y. X..(2000).Microstructure studies of GaInAsSb/GaSb heterostructure.Rare Metals,19(1),34-38. |
MLA | Zhang Z. Y.,et al."Microstructure studies of GaInAsSb/GaSb heterostructure".Rare Metals 19.1(2000):34-38. |
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