Microstructure studies of GaInAsSb/GaSb heterostructure

	Microstructure studies of GaInAsSb/GaSb heterostructure
	Zhang Z. Y.; Li S. W.; Zhang B. L.; Zhou T. M.; Jiang H.; Jin Y. X.
	2000
发表期刊	Rare Metals
ISSN	1001-0521
卷号	19 期号:1 页码:34-38
摘要	The preliminary results of scanning transmission electron microscope investigations on the interface of GaInAsSb/GaSb heterostructure were presented. STEM images show that the various dislocations and stacking faults were produced by the lattice mismatch between the quaternary GaInAsSb alloy and GaSb substrates. All these defects were the ways for relieving the misfit strain, including 60 degrees dislocation, 90 degrees dislocation and stacking faults. It is also found that only the 90 degrees dislocation can form the ridges on the surface of the epilayer.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34444
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang Z. Y.,Li S. W.,Zhang B. L.,et al. Microstructure studies of GaInAsSb/GaSb heterostructure[J]. Rare Metals,2000,19(1):34-38.
APA	Zhang Z. Y.,Li S. W.,Zhang B. L.,Zhou T. M.,Jiang H.,&Jin Y. X..(2000).Microstructure studies of GaInAsSb/GaSb heterostructure.Rare Metals,19(1),34-38.
MLA	Zhang Z. Y.,et al."Microstructure studies of GaInAsSb/GaSb heterostructure".Rare Metals 19.1(2000):34-38.