Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature

	Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature
	Zhang L. G.; Fan Y.; Xu S. F.; Yang W. Y.; An L. N.
	2011
发表期刊	Journal of Nanoscience and Nanotechnology
ISSN	1533-4880
卷号	11 期号:11 页码:9795-9798
摘要	The photoluminescence and temperature dependent emission spectra of silicon nitride nanowires were investigated by using femtosecond pulse laser. Three discrete sharp emission peaks were observed in photoluminescence, which were significantly different from that pumping by low excitation intensity laser. The temperature effects on emission peak energy were extracted using Gauss function, and should be attributed to volume-temperature effect and phonon effect.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34441
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang L. G.,Fan Y.,Xu S. F.,et al. Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature[J]. Journal of Nanoscience and Nanotechnology,2011,11(11):9795-9798.
APA	Zhang L. G.,Fan Y.,Xu S. F.,Yang W. Y.,&An L. N..(2011).Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature.Journal of Nanoscience and Nanotechnology,11(11),9795-9798.
MLA	Zhang L. G.,et al."Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature".Journal of Nanoscience and Nanotechnology 11.11(2011):9795-9798.