Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Improvements of Bilayer Ambipolar Organic Field-Effect Transistors Based on Pentacene and N,N '-Ditridecylperylene-3,4,9,10-tetracarboxylic Di-imide by Changing Growth Rate Method | |
Hu Y. S.; Zhang N.; Lin J.; Qin L.; Liu X. Y. | |
2012 | |
发表期刊 | Applied Physics Express |
ISSN | 1882-0778 |
卷号 | 5期号:9 |
摘要 | The changing growth rate method is adopted for the first time to improve the performance of ambipolar organic field-effect transistors (OFETs). Pentacene and N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) are chosen as p-type and n-type organic semiconductors, respectively. By modifying the dielectric surface with polystyrene, balanced carrier mobilities as high as 0.41 and 0.40 cm(2).V(-)1.s(-1) for hole and electron, respectively, are achieved through such method, which are the highest values for air-stable ambipolar OFETs. Meanwhile, the devices show negligible hysteresis and air stability for more than one week. (C) 2012 The Japan Society of Applied Physics |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/34408 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Hu Y. S.,Zhang N.,Lin J.,et al. Improvements of Bilayer Ambipolar Organic Field-Effect Transistors Based on Pentacene and N,N '-Ditridecylperylene-3,4,9,10-tetracarboxylic Di-imide by Changing Growth Rate Method[J]. Applied Physics Express,2012,5(9). |
APA | Hu Y. S.,Zhang N.,Lin J.,Qin L.,&Liu X. Y..(2012).Improvements of Bilayer Ambipolar Organic Field-Effect Transistors Based on Pentacene and N,N '-Ditridecylperylene-3,4,9,10-tetracarboxylic Di-imide by Changing Growth Rate Method.Applied Physics Express,5(9). |
MLA | Hu Y. S.,et al."Improvements of Bilayer Ambipolar Organic Field-Effect Transistors Based on Pentacene and N,N '-Ditridecylperylene-3,4,9,10-tetracarboxylic Di-imide by Changing Growth Rate Method".Applied Physics Express 5.9(2012). |
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