PHOTOVOLTAIC CHARACTERISTICS OF A ZNSXSE1-X GAAS HETEROJUNCTION WITH GRADUALLY CHANGED-X

	PHOTOVOLTAIC CHARACTERISTICS OF A ZNSXSE1-X GAAS HETEROJUNCTION WITH GRADUALLY CHANGED-X
	Wang J. F.; Xu X. R.
	1991
发表期刊	Journal of Luminescence
ISSN	0022-2313
页码	685-688
摘要	Heteroepitaxial layers of ZnS(x)Se1-x with gradually changed x are grown on GaAs substrates by means of VPE. ZnS and ZnSe powders are vaporized and the vapor is carried by a flow of H2 gas. Their photovoltaic characteristics are studied. An open circuit voltage of 0.76 V and a short circuit current of 32.9 mA cm-2 are obtained. The highest efficiency for the solar cells of ZnS(x)Se1-x/GaAs without antireflection coatings is 11%, 2% higher than that of ZnSe/GaAs cells fabricated in our laboratory. This value is found to be strongly dependent on the annealing temperature of ZnS(x)Se1-x thin film.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34319
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang J. F.,Xu X. R.. PHOTOVOLTAIC CHARACTERISTICS OF A ZNSXSE1-X GAAS HETEROJUNCTION WITH GRADUALLY CHANGED-X[J]. Journal of Luminescence,1991:685-688.
APA	Wang J. F.,&Xu X. R..(1991).PHOTOVOLTAIC CHARACTERISTICS OF A ZNSXSE1-X GAAS HETEROJUNCTION WITH GRADUALLY CHANGED-X.Journal of Luminescence,685-688.
MLA	Wang J. F.,et al."PHOTOVOLTAIC CHARACTERISTICS OF A ZNSXSE1-X GAAS HETEROJUNCTION WITH GRADUALLY CHANGED-X".Journal of Luminescence (1991):685-688.